HGTG20N60A4D igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-s.
operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.
Image gallery
TAGS
Download